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KRC284M fiches techniques PDF

Korea Electronics - (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

Numéro de référence KRC284M
Description (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
Fabricant Korea Electronics 
Logo Korea Electronics 





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KRC284M fiche technique
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min)
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
R1
B
C
E
KRC281M~KRC286M
EPITAXIAL PLANAR NPN TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
50
20
25
300
400
150
-55 150
UNIT
V
V
V
mA
W
2002. 12. 5
Revision No : 1
1/2

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