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IXYS Corporation - (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset

Numéro de référence IXBD4411
Description (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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IXBD4411 fiche technique
ISOSMARTTM Half Bridge Driver Chipset
Type
IXBD4410PI
IXBD4411PI
IXBD4410SI
IXBD4411SI
Description
Package
Temperature Range
Full-Feature Low-Side Driver 16-Pin P-DIP -40 to +85°C
Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C
Full-Feature Low-Side Driver 16-Pin SO
Full-Feature High-Side Driver 16-Pin SO
-40 to +85°C
-40 to +85°C
IXBD4410
IXBD4411
The IXBD4410/IXBD4411 ISOSMART
chipset is designed to control the gates
of two Power MOSFETs or Power
IGBTs that are connected in a half-
bridge (phase-leg) configuration for
driving multiple-phase motors, or used
in applications that require half-bridge
power circuits. The IXBD4410/
IXBD4411 is a full-feature chipset
consisting of two 16-Pin DIP or SO
devices interfaced and isolated by two
small-signal ferrite pulse transformers.
The small-signal transformers provide
greater than 1200 V isolation.
Even with commutating noise ambients
greater than ±50 V/ns and up to 1200 V
potentials, this chipset establishes
error-free two-way communications
between the system ground-reference
IXBD4410 and the inverter output-
reference IXBD4411. They incorporate
uonvedrecruvrorletangt eorVdDeD soartuVrEaEtilooncksohuuttadnodwn
to protect the IGBT or Power MOSFET
devices from damage.
The chipset provides the necessary
gate drive signals to fully control the
grounded-source low-side power
device as well as the floating-source
high-side power device. Additionally,
the IXBD4410/4411 chipset provides a
negative-going, off-state gate drive
signal for improved turn-off of IGBTs or
Power MOSFETs and a system logic-
compatible status fault output FLT to
indicate overcurrent or desaturation,
and undervoltage VDD or VEE. During a
status fault, both chipset keep their
respective gate drive outputs off; at
VEE.
540 V-
Features
z 1200 V or greater low-to-high side
isolation.
z Drives Power Systems Operating on
up to 575 V AC mains
z dv/dt immunity of greater than
±50V/ns
z Proprietary low-to-high side level
translation and communication
z On-chip negative gate-drive supply
to ensure Power MOSFET or IGBT
turn-off and to prevent gate noise
interference
z 5 V logic compatible HCMOS inputs
with hysteresis
z Available in either the 16-Pin DIP or
the 16-Pin wide-body, small-outline
plastic package
z 20 ns switching time with 1000 pF
load; 100 ns switching time with
10,000 pF load
z 100 ns propagation delay time
z 2 A peak output drive capability
z Self shut-down of output in response
to over-current or short-circuit
z Under-voltage and over-voltage VDD
lockout protection
z Protection from cross conduction of
the half bridge
z Logic compatible fault indication
from both low and high-side driver
Applications
z 1- or 3-Phase Motor Controls
z Switch Mode Power Supplies
(SMPS)
z Uninterruptible Power Supplies
(UPS)
z Induction Heating and Welding
Systems
z Switching Amplifiers
z General Power Conversion Circuits
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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