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ST Microelectronics - N-CHANNEL Power MOSFET

Numéro de référence STP14NF12
Description N-CHANNEL Power MOSFET
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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STP14NF12 fiche technique
STP14NF12
STP14NF12FP
N-CHANNEL 120V - 0.16- 14A TO-220/TO-220FP
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP14NF12
STP14NF12FP
120 V
120 V
< 0.18
< 0.18
s TYPICAL RDS(on) = 0.16
s EXCEPTIONAL dv/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
ID
14 A
14 A
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
(q) Pulse width limited by safe operating area
August 2002
Value
STP14NF12 STP14NF12FP
120
120
±20
14 8.5
96
56 34
60 25
0.4 0.17
9
60
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD 14A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, ID = 14A, VDD = 50V
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