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Numéro de référence | 3CA8772 | ||
Description | TO-126 Plastic-Encapsulate Transistors | ||
Fabricant | ETC | ||
Logo | |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA8772 TRANSISTOR PNP
FEATURES
Power dissipation
PCM : 1.25 W Tamb=25
Collector current
ICM : -3
A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 126
1. EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100 A IE=0
-40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC= -10 mA , IB=0
IE= -100 A IC=0
-30
-6
V
V
Collector cut-off current
ICBO VCB= -40 V , IE=0
-10 A
Collector cut-off current
Emitter cut-off current
ICEO VCE=-30 V , IB=0
IEBO VEB=-6V , IC=0
-10 A
-10 A
DC current gain
hFE VCE= -2V, IC= -1A
60
400
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5 V
Transition frequency
VCE= -5V, IC=-0.1A
f T f = 10MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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Pages | Pages 3 | ||
Télécharger | [ 3CA8772 ] |
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