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YG882C02R fiches techniques PDF

Fuji Semiconductors - Schottky Barrier Diode

Numéro de référence YG882C02R
Description Schottky Barrier Diode
Fabricant Fuji Semiconductors 
Logo Fuji Semiconductors 





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YG882C02R fiche technique
YG882C02R
SCHOTTKY BARRIER DIODE
(20V / 16A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
123
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
20 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=94°C
Square wave
Sine wave 10ms
20
1500
16*
120
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
mForward voltage drop **
.coReverse current **
t4uThermal resistance
heeMechanical Characteristics
tasMounting torque
www.daWeight
Symbol
VF
IR
Rth(j-c)
Conditions
IF=4.0A
VR=VRRM
Junction to case
Recommended torque
Max.
0.39
10.0
3.5
Unit
V
mA
°C/W
** Rating per element
0.3 to 0.5
2.3
N·m
g

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