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Promax-Johnton Semiconductor - NPN Epitaxial Silicon Transistor

Numéro de référence PJ13005
Description NPN Epitaxial Silicon Transistor
Fabricant Promax-Johnton Semiconductor 
Logo Promax-Johnton Semiconductor 





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PJ13005 fiche technique
PJ13005
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
High Speed Switching
Suitable for Switching Regulator and Motor Control
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta = 25)
Characteristic
Collector Emitter
Voltage(VBE=1.5V)
Collector Emitter
Voltage(open base)
Emitter Base Voltage(open
collector)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCEV
Rating
700
VCEO
400
VEBO
9
Ic 3
Ic 6
IB 2
Pc 75
Tj 150
Tstg -65 ~150
Unit
V
V
V
A
A
A
W
P in : 1. Base
2. Collector
3. Emitter
ORDERING INFORMATION
Device
PJ13005CZ
Operating Temperature Package
-20℃~+85
T O-220
ELECTRICAL CHARACTERISTICS(Ta = 25)
Characteristic
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Symbol
VCEO(SUS)
IEBO
hFE
VCE (sat)
VBE (sat)
t on
ts
tf
Test Condition
Ic = 10mA, IB = 0
VEB =9V, Ic=0
VCE =5V, Ic =1A
VCE =5V, Ic =2A
Ic =1A, IB =0.2A
Ic =2A, IB =0.5A
Ic =4A, IB =1A
Ic =1A, IB =0.2A
Ic =2A, IB =0.5A
VCC =125V, Ic =2A
IB1 =-IB2 =0.4A
Pulse Test: PW300 μS, Duty Cycle =1.5 %
Min Typ Max Unit
400 V
1 mA
10 60
8 40
0.5 V
0.6 V
1.0 V
1.2 V
1.6 V
0.8 μS
4 μS
0.9 μS
1-2 2002/01.rev.A

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