DataSheetWiki


MS1281 fiches techniques PDF

Advanced Power Technology - RF & Microwave Transistors FM Broadcast Applications

Numéro de référence MS1281
Description RF & Microwave Transistors FM Broadcast Applications
Fabricant Advanced Power Technology 
Logo Advanced Power Technology 





1 Page

No Preview Available !





MS1281 fiche technique
RF & MICROWAVE TRANSISTORS
FM BROADCAST APPLICATIONS
Features
108 MHz
28 VOLTS
GOLD METALLIZATION
POUT = 150 WATTS
GP = 9.2dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1281 is a 28V silicon NPN planar transistor
designed primarily for VHF FM broadcast transmitters.
Diffused emitter ballast provide infinite VSWR capability
under rated operating conditions.
MS1281
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
25
VCES
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
4.0
IC Device Current
16
PD
Tj
omTSTG
Power Dissipation
Junction Temperature
Storage Temperature
230
200
-65 to +150
Thermal Dataet4u.cRTH(J-C)
Thermal Resistance Junction-case
0.75
sheMS1281.PDF 5-8-03
ataAdvanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
www.dVisit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
V
A
W
°C
°C
° C/W

PagesPages 3
Télécharger [ MS1281 ]


Fiche technique recommandé

No Description détaillée Fabricant
MS1281 RF & Microwave Transistors FM Broadcast Applications Advanced Power Technology
Advanced Power Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche