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Numéro de référence | MS1281 | ||
Description | RF & Microwave Transistors FM Broadcast Applications | ||
Fabricant | Advanced Power Technology | ||
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1 Page
RF & MICROWAVE TRANSISTORS
FM BROADCAST APPLICATIONS
Features
• 108 MHz
• 28 VOLTS
• GOLD METALLIZATION
• POUT = 150 WATTS
• GP = 9.2dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1281 is a 28V silicon NPN planar transistor
designed primarily for VHF FM broadcast transmitters.
Diffused emitter ballast provide infinite VSWR capability
under rated operating conditions.
MS1281
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
25
VCES
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
4.0
IC Device Current
16
PD
Tj
omTSTG
Power Dissipation
Junction Temperature
Storage Temperature
230
200
-65 to +150
Thermal Dataet4u.cRTH(J-C)
Thermal Resistance Junction-case
0.75
sheMS1281.PDF 5-8-03
ataAdvanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
www.dVisit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
V
A
W
°C
°C
° C/W
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Pages | Pages 3 | ||
Télécharger | [ MS1281 ] |
No | Description détaillée | Fabricant |
MS1281 | RF & Microwave Transistors FM Broadcast Applications | Advanced Power Technology |
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