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Silicon Power Corporation - Inverter Thyristor

Numéro de référence C770A
Description Inverter Thyristor
Fabricant Silicon Power Corporation 
Logo Silicon Power Corporation 





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C770A fiche technique
INVERTER THYRISTOR
SPCO
C770 & C770A
77mm / 1800V / 60-80us
Disc-type ceramic PRESSPAK package
Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction
is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate
structure.It is supplied in an industry accepted disc-type package , ready to mount using
commercially available heat dissipators and mechanical clamping hardware.
C770
ON-STATE CHARACTERISTIC
On-state current , It (amperes)
10000
1000
Process Maximum
Pulsed Current
Initial Tj = 125 degC
100
012345678
On-state Voltage , Vt (volts)
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
.02
.01
ww .001
w.D.0001
ataS.00001
h0.1
Rthj-case(dc) =
.012 degC/watt
1
10
100
1000
On-Time (milliseconds)
10000
eet4USILICON POWER CORPORATION
.175 GREAT VALLEY PARKWAY, MALVERN, PA 19355
comUSA
Blocking Voltage Code
C770__
C770A__
MODEL
VDRM/VRRM
-40 to +125 oC
———————————-
C770 PN
1800 Volts
C770 PS
1700
C770 PM
1600
C770 PE
1500
C770 PD
1400
Gate Drive Requirements:
open circuit voltage
internal impedance
rise time of s.s. current
minimum duration
30-40 V
10
0.5 - 1 µs
10 µs
C770
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
Itsm (kA)
100
I2t (amp-sq-sec)
10.E6
50 5.E6
10 1.E6
1 10
Pulse Width - milliseconds
PG: 6.078 sh1 12/1/98

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