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Numéro de référence | IRL3103D1S | ||
Description | MOSFET & SCHOTTKY RECTIFIER | ||
Fabricant | International Rectifier | ||
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1 Page
PD- 9.1558A
IRL3103D1S
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Co-packaged HEXFET® Power MOSFET
D
and Schottky Diode
l Generation 5 Technology
VDSS = 30V
l Logic Level Gate Drive
l Minimize Circuit Inductance
RDS(on) = 0.014Ω
l Ideal For Synchronous Regulator Application G
ID = 64A
S
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
D 2 Pak
Max.
64
45
220
3.1
89
0.56
± 16
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
T O -26 2
Units
A
W
W
W/°C
V
°C
Units
°C/W
4/2/98
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Pages | Pages 7 | ||
Télécharger | [ IRL3103D1S ] |
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