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PDF K3067 Data sheet ( Hoja de datos )
| Número de pieza | K3067 | |
| Descripción | MOSFET ( Transistor ) - 2SK3067 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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1. K3067 pinout transistor  Hay una vista previa y un enlace de descarga de K3067 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SK3067
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3067
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.)
l High forward transfer admittance : |Yfs| = 1.7 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 600 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 µs)
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
2
5
8
25
93
2
2.5
150
−55~150
Unit
V
V
V
A
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Max Unit
Thermal reverse, channel to case
Thermal reverse, channel to ambient
Rth (ch−c)
Rth (ch−a)
5.0
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-06-05
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3067.PDF ] | |
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