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PDF 2SK0656 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0656 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Small drive current owing to high input inpedance
G High electrostatic breakdown voltage
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
50
8
100
200
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.45+–00..1200
(2.5) (2.5)
0.45+–00..1200
0.7±0.1
123
Internal Connection
R1
G
R2
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
40 80 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50 Ω
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20 35
mS
High level output voltage
VOH VDD = 5V, VGS = 1V, RL = 200Ω
4.5
V
Low level output voltage
Input resistance
VOL VDD = 5V, VGS = 5V, RL = 200Ω
R1 + R2*1
100
1V
200 kΩ
Input capacitance (Common Source) Ciss
9 pF
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*2
Turn-off time
toff*2
*1 Resistance ratio R1/R2 = 1/50
*2 Pulse measurement
VDS = 10V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
4.5 pF
1.1 pF
1 µs
1 µs
Note) The part number in the parenthesis shows conventional part number.
285
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK0656.PDF ] | |
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