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Fuji Semiconductors - Darlington Independent Power Module

Numéro de référence ET188
Description Darlington Independent Power Module
Fabricant Fuji Semiconductors 
Logo Fuji Semiconductors 





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ET188 fiche technique
ET188 .comTRIPLE DIFFUSED PLANER TYPE
POWER DARLINGTON
t4UHIGHVOLTAGE,HIGHCURRENT,HIGHSPEEDSWITCHING
.DataSheeFeatures
wwHigh voltage
w High reliability
FUJI POWER TRANSISTOR
Outline Drawings
Including free wheeling diode
mApplications
oSwitching regulators
.cMotor controls
High frequency Inverters
UGeneral Purpose power amplifier
JEDEC
EIAJ
-
-
et4Maximum ratings and characteristic
eAbsolute maximum ratings (Tc=25°C unless otherwise specified)
Item
hCollector-Base voltage
Collector-Emitter voltage
SCollector-Emitter voltage
Emitterr-Base voltage
taCollector current
aBase current
DC
1ms
DC
DC
1ms
.DCollector power disspation
Operating junction temperature
Storage temperature
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IC
-IC
IB
IB
PC
Tj
Tstg
Rating
400
-
300
10
100
200
6
12
600
+150
-40 to +125
Unit
V
V
V
V
A
A
A
A
A
W
°C
°C
wElectrical characteristics (Tc =25°C unless otherwise specified)
wItem
wCollector-Base voltage
Collector-Emitter voltage
mCollector-Emitter voltage
.coEmitter-Base voltage
Collector-Base leakage current
UEmitter-Base leakage current
t4D.C. current gain
eCollector-Emitter saturation voltage
eBase-Emitter saturation voltage
h*1
taSSwitching time
Symbol
VCBO
-VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
ICBO = mA
IC = 1A
IEBO = 200mA
VCBO = 400V
VEBO = 10V
IC = 100A, VCE = 5V
IC = 100A, IB = 1.0A
IC = 100A,+ IB = 2.0A
- IB = 2.0A, RL=2
PW=50µs, Duty<=2%
.DaThermalcharacteristics
wItem
wwThermal resistance
Symbol
Rth(j-c)
Test Conditions
Junctionl to case
Equivalent Circuit Schematic
Min.
400
-
300
10
200
Typ.
Max.
1.0
200
Units
V
V
V
V
mA
mA
2.0 V
2.5 V
2.0 µs
12.0 µs
3.0 µs
Min. Typ.
Max. Units
0.2 °C/W
1

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