DataSheetWiki


PU3117 fiches techniques PDF

Panasonic Semiconductor - (PUA3117) Silicon NPN triple diffusion planar type

Numéro de référence PU3117
Description (PUA3117) Silicon NPN triple diffusion planar type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





PU3117 fiche technique
Power Transistor Arrays
PUA3117 (PU3117)
Silicon NPN triple diffusion planar type
For power amplification and switching
Features
High forward current transfer ratio hFE
Satisfactory linearity of forward current transfer ratio hFE
NPN 3 elements
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
80
60
6
3
6
1
15
2.4
150
55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
20.2±0.3
Unit: mm
4.0±0.2
0.8±0.25
0.5±0.15
1.0±0.25
2.54±0.2
0.5±0.15
C 1.5±0.5
7 × 2.57 = 17.78±0.25
1: Emitter
2: Base
12345678
3: Collector
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0
60
V
Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0
100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
100 µA
Forward current transfer ratio
hFE VCE = 4 V, IC = 0.5 A
500 2 500
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.05 A
1.0 V
Transition frequency
fT VCE = 12 V, IC = 0.2 A, f = 10 MHz
50 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
35
246
1
7
8
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJK00007AED
1

PagesPages 3
Télécharger [ PU3117 ]


Fiche technique recommandé

No Description détaillée Fabricant
PU3117 (PUA3117) Silicon NPN triple diffusion planar type Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche