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OMRON - Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment

Numéro de référence EE-SB5
Description Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment
Fabricant OMRON 
Logo OMRON 





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EE-SB5 fiche technique

EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
Photomicrosensor with 80-mA
Switching Capacity that can be Built
into Equipment
 Built-in amplifier
 Models available with 5- to 12-VDC and
5- to 15-VDC input
 CMOS- and TTL-compatible
 Model with easy adjustment with an
external sensitivity adjuster (EE-SB5V)
 Special connectors (EE-1001/1006) are
available
 19-mm sensing distance (EE-SB5V-E)
 Convert to PNP output with EE-2002
conversion connector
Ordering Information
Appearance
Sensing method
Reflective
Sensing distance
5 mm
19 mm
Output configuration
Light-ON
Dark-ON
Light-ON
Dark-ON
Light-ON
Weight
Approx. 3.0 g
Approx. 2.8 g
Part number
EE-SB5M
EE-SB5MC
EE-SB5V
EE-SB5VC
EE-SB5V-E
Specifications
 RATINGS
Item
Supply voltage
Current consumption
Maximum forward direct current (IF)
Forward voltage (VF)
Reverse voltage (VR)
Standard reference object
Differential distance
Reflective
EE-SB5M
EE-SB5MC
EE-SB5V(-E)
EE-SB5VC
5 to 12 VDC ±10%, ripple (p-p): 10% max. 5 to 15 VDC ±10%, ripple (p-p): 10% max.
36 mA max.
48 mA max. (DC current: IF = 25 mA)
30 mA max.
— 1.5 V max. (IF = 30 mA)
— 4 V max.
White paper with reflection factor of 90% (standard sensing object: 15 x 15 mm)
0.1 mm
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