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SG-615PHW fiches techniques PDF

EPSON Electronics - SOJ High Frequency Crystal Oscillator

Numéro de référence SG-615PHW
Description SOJ High Frequency Crystal Oscillator
Fabricant EPSON Electronics 
Logo EPSON Electronics 





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SG-615PHW fiche technique
Crystal oscillator
mSOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-615t4sU.ecoriesHigh-density mounting-type SMD.
eeA general-purpose SMD with heat-resisting cylindrical AT-cut
hcrystal unit and allowing almost the same soldering temperature
taSas SMD IC.
aCylindrical AT crystal unit builtin, thus assuring high reliability.
.DProvided with output enable function.
wwwLow current consumption.
Specifications (characteristics)
Item
Symbol
SG-615P
SG-615PTJ
Specifications
SG-615PH
Remarks
mOutput frequency range
f0 1.0250 MHz to 26.0000 MHz
26.0001 MHz to 66.6667 MHz
oPower source
voltage
.cTemperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Soldering condition
VDD-GND
VDD
TSTG
TOPR
TSOL
UFrequency stability
t4Current consumption
Duty
C-MOS level
TTL level
eOutput voltage
heOutput load
condition (fan out)
C-MOS
TTL
SOutput enable/disable input voltage
taOutput disable current
Output rise time C-MOS level
TTL level
aOutput fall time C-MOS level
TTL level
f/f0
Iop
tw/t
VOH
(IOH)
VOL
(IOL)
CL
N
VIH
VIL
IOE
tTLH
tTHL
-0.3 V to +7.0 V
5.0 V±0.5 V
-55 °C to +125 °C
-20 °C to 70 °C (-40 °C to 85 °C)
Twice at under 260 °C within 10 s
or under 230 °C within 3 min.
B: ±50 x 10-6
C: ±100 x 10-6
23 mA Max.
35 mA Max.
40 % to 60 %
40 % to 60 %
45 % to 55 %
VDD -0.4 V Min.
2.4 V Min.
VDD -0.4 V Min.
-400 µA
-4 mA
0.4 V Max.
16 mA
8 mA
4 mA
50 pF Max.
50 pF Max.
10 TTL Max.
5 TTL Max.
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
12 mA Max.
8 ns Max.
28 mA Max.
5 ns Max.
20 mA Max.
7 ns Max.
7 ns Max.
5 ns Max.
Stored as bare product after unpacking
55 MHz Max.(-40 °C to +85 °C)
B type is possible up to 55 MHz
No load condition
C-MOS load: 1/2VDD
TTL load: 1.4 V
CL<_15 pF
IIH=1 µA Max.(OE=VDD)
IIL=-100 µA Min.(OE=GND) IIL=-500 µA Min.(OE=GND) PTJ
OE=GND
C-MOS load: 20 %80 % VDD
TTL load: 0.4 V2.4 V
C-MOS load: 80 %20 % VDD
TTL load: 2.4 V0.4 V
.DOscillation start up time
Aging
wShock resistance
tOSC 4 ms Max.
10 ms Max.
fa ±5 x 10-6/year Max.
S.R.
±20 x 10-6 Max.
Time at 4.5 V to be 0 s
Ta= +25 °C, VDD = 5 V, first year
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
Note: Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
wExternal by-pass capacitor is recommended.
wExternal dimensions
(Unit: mm)
Recommended soldering pattern
(Unit: mm)
#4 #3
SG-615P C
20.0000M
E 9352A
#1 #2
14.0 Max.
NO. Pin terminal
1 OE
2 GND
3 OUT
4 VDD
5.08 0.51
7.62
33
ww1.3 w.D3.8ataS1h.3 eet4U.com

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