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ETC - HGTG30N60

Numéro de référence G30N60
Description HGTG30N60
Fabricant ETC 
Logo ETC 





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G30N60 fiche technique
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Data Sheet
HGTG30N60A4
August 2003
File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4
TO-247
G30N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 30A
• 200kHz Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1

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