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PDF STU1030PL Data sheet ( Hoja de datos )
| Número de pieza | STU1030PL | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STU1030PL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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t4U.com S T U /D 1030P LSamHop Microelectronics Corp.
SheeP-C hannel E nhancement Mode MOS FE T
P reliminary May.28 2004
.DataPR ODUCT S UMMAR Y
wV DS S ID R DS (ON) ( m W ) Max
ww .com-30V
-18A
55 @ VGS = -10V
85 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
UD
t4G
S
eSDU SERIES
T O -252AA(D-P AK )
GDS
S DD S E R IE S
TO-251(l-P AK)
D
G
S
heABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
SP a ra meter
taDrain-S ource Voltage
S ymbol
VDS
Limit
30
Unit
V
aGate-S ource Voltage
VGS 20
V
.DDrain Current-Continuous a @ TJ=125 C
-P ulsed b
ID
IDM
18
45
A
A
w mDrain-S ource Diode Forward Current a
IS
20
A
w .coMaximum Power Dissipation a
PD 50 W
w t4UOperating Junction and S torage
eTemperature R ange
TJ, TSTG
-55 to 175
C
taSheTHE R MAL CHAR ACTE R IS TICS
aThermal R esistance, Junction-to-C ase
R JC
3 C/W
w.DThermal R esistance, Junction-to-Ambient
R JA
50
C /W
ww1
1 page  
S T U/D1030P L
V DD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 12. S witching Waveforms
6
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
S INGLE PULS E
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R J A (t)=r (t) * R J A
2. R J A=S ee Datas heet
3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STU1030PL.PDF ] | |
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