(PDF) D2020UK-P Datasheet - METAL GATE RF SILICON FET

Número de pieza	D2020UK-P
Descripción	METAL GATE RF SILICON FET
Fabricantes	Seme LAB
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No Preview Available ! MEwCwHAwN.IDCAaLtaDASThAeet4U.com TetraFET D2020UK–P METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz omSINGLE ENDED U.cFEATURES t4• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS ee• VERY LOW Crss h• SIMPLE BIAS CIRCUITS S• LOW NOISE ta • HIGH GAIN – 13 dB MINIMUM .Da APPLICATIONS • HF/VHF/UHF COMMUNICATIONS www from 1 MHz to 1 GHz omSOIC PACKAGE t4U.cABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ePD Power Dissipation 30W heBVDSS Drain – Source Breakdown Voltage * 65V taSBVGSS Gate – Source Breakdown Voltage* ±20V aID(sat) Drain Current 2A .DTstg Storage Temperature –65 to 150°C wTj Maximum Operating Junction Temperature 200°C wwSemelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/95 E-mail: [email protected] Website: http://www.semelab.co.uk 1 page

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PDF D2020UK-P Data sheet ( Hoja de datos )