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Datasheet K3299-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
K32 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K320 | N-Channel MOSFET, 2SK320 Hitachi Semiconductor data | | |
2 | K3207EC450 | Medium Voltage Thyristor Date:- 15 Nov, 2013 Data Sheet Issue:- 1
Medium Voltage Thyristor Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p IXYS thyristor | | |
3 | K3207EC480 | Medium Voltage Thyristor Date:- 15 Nov, 2013 Data Sheet Issue:- 1
Medium Voltage Thyristor Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p IXYS thyristor | | |
4 | K3207EC520 | Medium Voltage Thyristor Date:- 15 Nov, 2013 Data Sheet Issue:- 1
Medium Voltage Thyristor Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p IXYS thyristor | | |
5 | K3209 | N-Channel MOSFET, 2SK3209 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Dr Hitachi Semiconductor data | | |
6 | K3216-01 | N-Channel MOSFET, 2SK3216-01 2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
3. Source
Maximum ratings and chara Fuji Electric data | | |
7 | K3228 | N-Channel MOSFET, 2SK3228 2SK3228
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features
• Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Hitachi Semiconductor data | |
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