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Datasheet K3299-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


K32 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K320N-Channel MOSFET, 2SK320

Hitachi Semiconductor
Hitachi Semiconductor
data
2K3207EC450Medium Voltage Thyristor

Date:- 15 Nov, 2013 Data Sheet Issue:- 1 Medium Voltage Thyristor Type K3207EC450 to K3207EC520 Development Type No. Kx142EC450-520 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p
IXYS
IXYS
thyristor
3K3207EC480Medium Voltage Thyristor

Date:- 15 Nov, 2013 Data Sheet Issue:- 1 Medium Voltage Thyristor Type K3207EC450 to K3207EC520 Development Type No. Kx142EC450-520 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p
IXYS
IXYS
thyristor
4K3207EC520Medium Voltage Thyristor

Date:- 15 Nov, 2013 Data Sheet Issue:- 1 Medium Voltage Thyristor Type K3207EC450 to K3207EC520 Development Type No. Kx142EC450-520 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p
IXYS
IXYS
thyristor
5K3209N-Channel MOSFET, 2SK3209

2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1. Gate 2. Dr
Hitachi Semiconductor
Hitachi Semiconductor
data
6K3216-01N-Channel MOSFET, 2SK3216-01

2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and chara
Fuji Electric
Fuji Electric
data
7K3228N-Channel MOSFET, 2SK3228

2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2.
Hitachi Semiconductor
Hitachi Semiconductor
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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