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IR01D224 fiches techniques PDF

International Rectifier - (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE

Numéro de référence IR01D224
Description (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
Fabricant International Rectifier 
Logo International Rectifier 





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IR01D224 fiche technique
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Features
Output Power MOSFETs in half-bridge configuration
m500V rated breakdown voltage
High side gate drive designed for bootstrap
ooperation
Matched propagation delay for both channels
.cUndervoltage lockout
5V Schmitt-triggered input logic
Half-Bridge output in phase with HIN
UHeatsink version (P2) with improved PD
t4Description
The IR01H(D)xxx is a high voltage, high speed half
ebridge. Proprietary HVIC and latch immune CMOS
etechnologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
hpackage construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
Sdriver in phase with the logic compatible input
tasignals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
ahalf bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
Product Summary
VIN (max)
250V- 214/224
500V - 420
ton/off
trr
RDS(on)
130 & 90 ns
260 ns
2.0- H214
1.1- H224
3.0- H420
PD(TA = 25oC)
2.0W
4.0W - P2
Packages
.DTypical Connection
wVIN
wVcc
w omHIN
.cL IN
heet4UCOM
HV DC Bus
D1
1 Vcc VB 6
2 HIN
VIN 9
3 L IN
VO 7
COM
4
NOTE: D1 is not required for
the HD type
TO
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