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PDF STE40NK90ZD Data sheet ( Hoja de datos )

Número de pieza STE40NK90ZD
Descripción N-CHANNEL Power MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STE40NK90ZD Hoja de datos, Descripción, Manual

STE40NK90ZD
N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP
Super FREDMesh™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STE40NK90ZD 900 V < 0.18 Ω 40 A 600 W
s TYPICAL RDS(on) = 0.14 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperFREDMesh™ series is obtained
through an extreme optimization of ST’s well es-
tablished strip-based PowerMESH™ layout. In ad-
dition to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary MD-
mesh™ products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR WELDING EQUIPMENT
Figure 1: Package
ISOTOP
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE
STE40NK90ZD
MARKING
E40NK90ZD
PACKAGE
ISOTOP
PACKAGING
TUBE
December 2004
www.DataSheet4U.com
Rev. 4
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STE40NK90ZD pdf
STE40NK90ZD
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVdss vs Temperature
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