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STP10NK80Z fiches techniques PDF

ST Microelectronics - N-CHANNEL Power MOSFET

Numéro de référence STP10NK80Z
Description N-CHANNEL Power MOSFET
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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STP10NK80Z fiche technique
STP10NK80Z, STP10NK80ZFP,
STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™
Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
Type
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
VDSS
800V
800V
800V
RDS(on)
<0.90Ω
<0.90Ω
<0.90Ω
ID
9A
9A
9A
Pw
160 W
40 W
160 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeability
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
Applications
Switching application
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Part number
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
Marking
P10NK80Z
P10NK80ZFP
W10NK80Z
Package
TO-220
TO-220FP
TO-247
Packaging
Tube
Tube
Tube
March 2012
This is information on a product in full production.
Doc ID 8911 Rev 7
1/17
www.st.com
17

PagesPages 17
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