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PDF AT41470 Data sheet ( Hoja de datos )
| Número de pieza | AT41470 | |
| Descripción | NPN SILICON BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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AT41470
NPN SILICON BIPOLAR TRANSISTOR
DESCRIPTION:
The ASI AT41470 is a Common
Emitter Device Designed for low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
MAXIMUM RATINGS
IC 60 mA
VCEO
12 V
VCBO
20 V
VEBO
1.5 V
PDISS
500 mW @ TC = 25°C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
PACKAGE STYLE
1 = BASE
2 & 4 = EMITTER
3 = COLLECTOR
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
ICBO
VCB = 8.0 V
IEBO
VEB = 1.0 V
hFE
VCE = 8.0 V
IC = 10 mA
CCB VCB = 8.0 V
f = 1.0 MHz
ft
VCE = 8.0 V
IC = 25 mA
f = 1.0 GHz
S21E 2
VCE = 8.0 V
IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
P1dB
VCE = 8.0 V
IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
G1dB
VCE = 8.0 V
IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
NFO
VCE = 8.0 V
IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
MINIMUM TYPICAL MAXIMUM
200
1.0
30 150 300
0.2
8.0
12.0
6.5
19.0
18.5
15.0
10.5
1.3
1.6 1.9
3.0
UNITS
Na
µA
---
pF
GHz
dB
dBm
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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