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PDF PN155 Data sheet ( Hoja de datos )
| Número de pieza | PN155 | |
| Descripción | Silicon NPN Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
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Phototransistors
PNZ155 (PN155)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Flat type plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
10
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3
2-0.45±0.15
12
0.45±0.2
2.54±0.2
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
0.01 1
µA
Collector photo current
ICE(L)*1 VCE = 10V, L = 100 lx
0.05 0.2
mA
Peak sensitivity wavelength λP VCE = 10V
800 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
70
deg.
Response time
tr, tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100Ω
4
µs
Collector saturation voltage VCE(sat)*1 ICE(L) = 1mA, L = 1000 lx
0.2 0.5 V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT (Output pulse)
50Ω RL
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td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PN155.PDF ] | |
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