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Número de pieza | SUB45N03-13L | |
Descripción | N-Channel MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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SUB45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.013 @ VGS = 10 V
0.02 @ VGS = 4.5 V
ID (A)
45a
45a
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
TO-263
D
G
G DS
Top View
SUB45N03-13L
S
www.DataSheet4U.comN-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cd
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
30
"20
45a
34a
100
45
100
88c
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case (Drain)
Parameter
PCB Mountd
Symbol
RthJA
RthJC
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71740
S-05010—Rev. G, 05-Nov-01
Limit
40
1.7
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
1
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1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SUB45N03-13L.PDF ] |
Número de pieza | Descripción | Fabricantes |
SUB45N03-13L | N-Channel MOSFET | Vishay Siliconix |
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