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Numéro de référence | SUB85N02-03 | ||
Description | N-Channel MOSFET | ||
Fabricant | Vishay Siliconix | ||
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SUP/SUB85N02-03
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.003 @ VGS = 4.5 V
20 0.0034 @ VGS = 2.5 V
0.0038 @ VGS = 1.8 V
TO-220AB
ID (A)a
85
85
85
TO-263
D
G
DRAIN connected to TAB
G DS
Top View
GD S
S
SUB85N02-03
Top View
www.DataSheet4U.comSUP85N02-03
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
20
"8
85
85
240
30
45
250
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)c
Free Air (TO-220AB)
Notes:
a. See SOA curve for voltage derating.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71421
S-03181—Rev. A, 05-Mar-01
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
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Pages | Pages 5 | ||
Télécharger | [ SUB85N02-03 ] |
No | Description détaillée | Fabricant |
SUB85N02-03 | N-Channel MOSFET | Vishay Siliconix |
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