DataSheetWiki


SUB85N02-03 fiches techniques PDF

Vishay Siliconix - N-Channel MOSFET

Numéro de référence SUB85N02-03
Description N-Channel MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





1 Page

No Preview Available !





SUB85N02-03 fiche technique
www.DataSheet4U.com
New Product
SUP/SUB85N02-03
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.003 @ VGS = 4.5 V
20 0.0034 @ VGS = 2.5 V
0.0038 @ VGS = 1.8 V
TO-220AB
ID (A)a
85
85
85
TO-263
D
G
DRAIN connected to TAB
G DS
Top View
GD S
S
SUB85N02-03
Top View
www.DataSheet4U.comSUP85N02-03
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
20
"8
85
85
240
30
45
250
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)c
Free Air (TO-220AB)
Notes:
a. See SOA curve for voltage derating.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71421
S-03181—Rev. A, 05-Mar-01
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com
1
www.DataSheet4U.com

PagesPages 5
Télécharger [ SUB85N02-03 ]


Fiche technique recommandé

No Description détaillée Fabricant
SUB85N02-03 N-Channel MOSFET Vishay Siliconix
Vishay Siliconix
SUB85N02-03 N-channel 20-V (D-S) 175C MOSFET Vishay Intertechnology
Vishay Intertechnology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche