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SUB75P03-07 fiches techniques PDF

Vishay Siliconix - P-Channel MOSFET

Numéro de référence SUB75P03-07
Description P-Channel MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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SUB75P03-07 fiche technique
SUB75P03-07, SUP75P03-07
Vishay Siliconix
P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
0.007 at VGS = - 10 V
0.010 at VGS = - 4.5 V
ID (A)a
± 75
± 75
TO-220AB
TO-263
FEATURES
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DRAIN connected to TAB
G DS
Top View
SUB75P03-07
GD S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263)
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
TC = 25 °C
TC = 125 °C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)c
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
Limit
± 20
- 75a
- 65
- 240
- 60
180
187d
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle 1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
Symbol
RthJA
RthJC
Limit
40
62.5
0.8
Unit
°C/W
www.vishay.com
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