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SUB70N06-14 fiches techniques PDF

Vishay Siliconix - N-Channel MOSFET

Numéro de référence SUB70N06-14
Description N-Channel MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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SUB70N06-14 fiche technique
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SUP/SUB70N06-14
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.014
TO-220AB
ID (A)
70a
TO-263
D
DRAIN connected to TAB
G
GD S
Top View
G DS
Top View
SUB70N06-14
S
SUP70N06-14
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 100_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
"20
70a
49
160
70
180
142c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)d
Free Air (TO-220AB)
RthJA
RthJC
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
Limit
40
62.5
1.05
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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