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NXP Semiconductors - BU2506DF

Numéro de référence 2506DF
Description BU2506DF
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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2506DF fiche technique
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
www.DataSheetVV4UCCEE.cSOoMm
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 3.0 A; IB = 0.79 A
IF = 3.0 A
ICsat = 3.0 A; IB(end) = 0.67 A
TYP.
-
-
-
-
-
-
3.0
1.6
0.25
MAX.
1500
700
5
8
45
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
5
8
3
5
100
4
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
September 1997
1
Rev 1.400

PagesPages 7
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