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P20NM50 fiches techniques PDF

ST Microelectronics - STSTP20NM50

Numéro de référence P20NM50
Description STSTP20NM50
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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P20NM50 fiche technique
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-CHANNEL 550V@Tjmax - 0.20- 20A - TO220/FP-D²PAK-I²PAK
Zener-Protected SuperMESH™ MOSFET
General features
Type
STB20NM50
STB20NM50-1
STP20NM50
STP20NM50FP
VDSS(@Tj
max)
RDS(on)
550 V
550 V
550 V
550 V
<0.25
<0.25
<0.25
<0.25
ID
20 A
20 A
20 A
20 A
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s
PowerMESH™horizontal layout. The resulting
product has an outstanding low on-resistance,
impressively high dv/dt and exellent avalanche
characteristics and dynamic performances.
Applications
The MDmesh™ family is very suitable for
increasing power density of high voltage
converters allowing system miniaturization
andhiher efficiencies
Order codes
Package
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Internal schematic diagram
Sales Type
STB20NM50T4
STB20NM50-1
STP20NM505
STP20NM50FP
September 2005
Marking
B20NM50
B20NM50-1
P20NM50
P20NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2
1/16
www.st.com
16

PagesPages 16
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