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Número de pieza | STP6NB50 | |
Descripción | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STP6NB50
STP6NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
STP6NB50
STP6NB50FP
500 V
500 V
< 1.5 Ω
< 1.5 Ω
5.8 A
3.4 A
s TYPICAL RDS(on) = 1.35 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
3
2
1
3
2
1
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
TO-220
TO-220FP
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.
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APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
Value
STP6NB50 STP6NB50FP
500
500
± 30
5.8 3.4
3.7 2.1
23.2
23.2
100 35
0.8 0.28
4.5 4.5
-- 2000
-65 to 150
150
(1) ISD ≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
oC
1/9
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Gate Charge vs Gate-source Voltage
Capacitance Variations
STP6NB50/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
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5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STP6NB50.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP6NB50 | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | ST Microelectronics |
STP6NB50FP | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | ST Microelectronics |
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