|
|
Numéro de référence | VG2617405F | ||
Description | CMOS DRAM | ||
Fabricant | Vanguard Microelectronics Limited | ||
Logo | |||
www.DataSheet4U.com
VIS
Description
VG26(V)(S)17405F
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. Self-Refresh is supported and CBR cycles are being performed. lt is pack-
aged in JEDEC standard 26/24-pin plastic SOJ or TSOPII.
Features
• Single 5V( ±10 %) or 3.3V(3.15V~3.6V) only power supply
• High speed tRAC access time: 50/60ns
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh
• Refresh interval:
DataSheet4U.com
- RAS only refresh, CAS - before - RAS refresh and hidden refresh: 2048 cycles in 32ms
- Self-refresh: 2048 cycles
• JEDEC standard pinout: 26/24-pin plastic SOJ and TSOPII.
DataShee
DataSheet4U.com
Document:1G5-0187
DataSheet4 U .com
Rev.2
Page 1
|
|||
Pages | Pages 28 | ||
Télécharger | [ VG2617405F ] |
No | Description détaillée | Fabricant |
VG2617405 | CMOS DRAM | Vanguard Microelectronics Limited |
VG2617405F | CMOS DRAM | Vanguard Microelectronics Limited |
VG2617405FJ | CMOS DRAM | Vanguard International Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |