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PDF DIM100WHS12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM100WHS12-A000 | |
| Descripción | IGBT Power Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM100WHS12-A000
DIM100WHS12-A000
Half Bridge IGBT Module
Replaces February 2004 version, issue DS5735-1.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Inverters
I Motor Controllers
DS5735-2.0 May 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
100A
IC(PK)
(max)
200A
*(Measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
1(E1C2)
2(E2)
The DIM100WHS12-A000 is a half bridge switch 1200V, n
channel enhancement mode, insulated gate bipolarDtraatnasSishtoeret4U.com
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Half bridge circuit diagram
3(C1)
4(G1)
5(E1)
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM100WHS12-A000
TYPICAL CHARACTERISTICS
200
Common emitter
Tcase = 25˚C
175 Vce is measured at power busbars
and not the auxiliary terminals
150
200
Common emitter
Tcase = 125˚C
175 Vce is measured at power busbars
and not the auxiliary terminals
150
125 125
100 100
75 75
et4U.com
50 50
VGE = 10V
25 VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE = 10V
25 VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-emitter voltage, Vce - (V)
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com Fig. 4 Typical output characteristics
DataShee
22.5
20.0
Tc = 125˚C,
Vcc = 600V,
Rg = 10 Ohms
17.5
15.0
12.5
10.5
7.5
5.0
2.5
0
0
Eon
Eoff
Erec
50
100 150
200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
27.5
Tc = 125˚C,
25.0
Vcc = 600V,
IC = 100A
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
Eon
Eoff
Erec
0
8 12 16 20 24
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DIM100WHS12-A000.PDF ] | |
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