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PDF B817C Data sheet ( Hoja de datos )

Número de pieza B817C
Descripción PNP Transistor - 2SB817C
Fabricantes Sanyo Electric 
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No Preview Available ! B817C Hoja de datos, Descripción, Manual

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Ordering number : ENA0188
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2SB817C / 2SD1047C
2SB817C / 2SD1047C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 80W Output Applications
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications ( ) : 2SB817C
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Tc=25°C
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Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitterr Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)160V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)5A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0A
IC=(--)50mA, RBE=
IE=(--)5mA, IC=0A
Ratings
(--)160
(--)140
(--)6
(--)12
(--)20
2.5
120
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
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min
100
35
(--)160
(--)140
(--)6
Ratings
typ
max
(--)0.1
(--)0.1
200
Unit
mA
mA
(10)15
MHz
(280)140
pF
1.5 V
(--0.3)0.2
(--)2.0
V
V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13106DA MS IM TB-00001810 No. A0188-1/4

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