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Numéro de référence | K3236 | ||
Description | MOSFET ( Transistor ) - 2SK3236 | ||
Fabricant | TOSHIBA | ||
Logo | |||
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2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
· 4 V gate drive
· Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 42 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
· Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 60 V
VDGR 60 V
VGSS ±20 V
ID
35
A
IDP 105
PD 30 W
EAS DataShe6e8t4U.com mJ
IAR 35 A
EAR
3.0 mJ
Tch 150 °C
Tstg
-55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.16
62.5
°C/W
°C/W
Note 1: Please use devises on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 40 mH, RG = 25 W, IAR = 35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
DataShee
DataSheet4U.com
1 2002-08-12
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Pages | Pages 6 | ||
Télécharger | [ K3236 ] |
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