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XN01110 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - Silicon PNP epitaxial planer transistor

شماره قطعه XN01110
شرح مفصل Silicon PNP epitaxial planer transistor
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 





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XN01110 شرح
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Composite Transistors
XN1110
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN1110 × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: AD
Internal Connection
Tr1
5
1
4
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
*1 Ratio between 2 elements
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VOH
VOL
fT
R1
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCB = –10V, IE = 1mA, f = 200MHz
min
–50
–50
160
0.5
–4.9
–30%
2
Tr2
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.01 mA
460
0.99
– 0.25 V
V
– 0.2
V
80 MHz
47 +30% k
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