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XN01112 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - Silicon PNP epitaxial planar type For switching/digital circuits

شماره قطعه XN01112
شرح مفصل Silicon PNP epitaxial planar type For switching/digital circuits
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 





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XN01112 شرح
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Composite Transistors
XN01112 (XN1112)
Silicon PNP epitaxial planar type
For switching/digital circuits
Features
Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
UNR2112 (UN2112) × 2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
55 to +150
Unit
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 7K
Internal Connection
34
5
Tr2 Tr1
Electrical Characteristics Ta = 25°C ± 3°C
21
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
hFE Ratio *
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE(Small
/Large)
VCE(sat)
VOH
VOL
R1
R1 / R2
fT
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 k
VCC = −5 V, VB = −2.5 V, RL = 1 k
VCB = −10 V, IE = 1 mA, f = 200 MHz
50
50
60
0.50
4.9
30%
0.8
0.1
0.5
0.2
0.99
0.25
0.2
22 +30%
1.0 1.2
80
V
V
µA
µA
mA
V
V
V
k
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00005BED
1
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