|
|
Numéro de référence | T620W | ||
Description | SNUBBERLESS TRIAC | ||
Fabricant | ST Microelectronics | ||
Logo | |||
1 Page
T620W
® T630W
6A SNUBBERLESS™ TRIAC
www.DataSheet4UM.coAmIN FEATURES
Symbol
Value
IT(RMS)
6
VDRM/VRRM 600 and 800
IGT 20 to 30
Unit
A
V
mA
A2
G
A1
DESCRIPTION
Based on ST’ Snubberless technology providing high
commutation performances, the T620-600W/800W &
T630-600W/800W are specially recommended for
use on inductive loads, thanks to their high commuta-
tion performances, such as rice cookers. They comply
with UL standards (ref. E81734).
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value Unit
IT(RMS)
ITSM
I2t
RMS on-state current (Full sine wave)
Non repetitive surge peak on-state
current (Full cycle, Tj initial = 25°C )
I2t Value for fusing
Tc= 105°C
F = 50Hz t = 20ms
F = 60Hz t = 16.7ms
tp = 10 ms
6
80
84
36
A
A
A2s
dI/dt
VDSM/VRSM
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100ns
Non repetitive surge peak off-state
voltage
F = 120 Hz Tj = 125°C 50 A/µs
tp = 10ms
Tj = 25°C VDRM/VRRM
+ 100
V
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20µs
Tj = 125°C
4
Tj = 125°C
1
- 40 to + 150
- 40 to + 125
A
W
°C
March 2004 - Ed: 2
1/5
|
|||
Pages | Pages 5 | ||
Télécharger | [ T620W ] |
No | Description détaillée | Fabricant |
T620 | Phase Control SCR | Powerex Power Semiconductors |
T620-600W | SNUBBERLESS TRIAC | ST Microelectronics |
T6201230 | SILICON CONTROLLED RECTIFIER | Powerex |
T620W | SNUBBERLESS TRIAC | ST Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |