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PDF MW4IC2230GNBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW4IC2230GNBR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
•
Typical
60 mA,
Single - Carrier W - CDMA Performance:
IDQ2 = 350 mA, Pout = 5 Watts Avg., f =
2V1D4D0=M2H8 zV,oClths,aInDnQe1l
=
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
• BT6y0apnmidcAaw,lidSIDtihnQg2=le=3-.38C54a0rMrmiHeArz,W, PP-oACuRt[email protected],e%f: =VPD2rDo1b4=a02bM8iliHVtyozol,tnsC,ChIDaCQnDn1Fe=.l
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
Pout.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW4IC2230N
Rev. 6, 5/2006
MW4IC2230NBR1
MW4IC2230GNBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GNBR1
VRD1
VRG1
VDS2
VDS1
3 Stages IC
GND
VDS2
VRD1
VRG1
VDS1
RFin
1
2
3
4
5
6
16 GND
15
VDS3/
14 RFout
7
RFin
VDS3/RFout
VGS1
VGS2
8
9
VGS3 10
13
VGS1
VGS2
VGS3
Quiescent Current
Temperature Compensation
GND 11
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
1
1 page  
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C2
VD2
VD1
C1
MW4IC2230
Rev 1
C5
C6
R1
VG1
R2
VG2
R3
VG3
C7
C9
C10 C11
C8
C3
VD3
C12
GND
C4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
5
5 Page 
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RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MW4IC2230GNBR1.PDF ] | |
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