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Motorola Semiconductors - RF LDMOS Wideband Integrated Power Amplifiers

Numéro de référence MW4IC915NBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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MW4IC915NBR1 fiche technique
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multistage
structure. Its wideband OnChip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, NCDMA and WCDMA.
Final Application
Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869894 MHz
and 921960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = 65 dBc
Spectral Regrowth @ 600 kHz Offset = 83 dBc
EVM — 1.5%
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
Characterized with Series Equivalent LargeSignal Impedance Parameters
OnChip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
OnChip Current Mirror gm Reference FET for Self Biasing Application(1)
Integrated ESD Protection
N Suffix Indicates LeadFree Terminations
200°C Capable Plastic Package
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2
VRG2
VDS1
RFin
VRD1
VRG1
VDS2/RFout
VGS1 Quiescent Current
VGS2 Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC915
Rev. 5, 3/2005
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
860 960 MHz, 15 W, 26 V
GSM/GSM EDGE, NCDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 132909
TO272 WB16
PLASTIC
MW4IC915NBR1(MBR1)
CASE 1329A03
TO272 WB16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
GND
VRD2
VRG2
VDS1
VRD1
RFin
VRG1
VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
RFout/
VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes AN1987.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1

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