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Numéro de référence | RN1316 | ||
Description | (RN1314 - RN1318) TOSHIBA Transistor Silicon NPN Epitaxial Type | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
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RN1314~RN1318
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1314,RN1315,RN1316
RN1317,RN1318
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2314~RN2318
Equivalent Circuit and Bias Resister Values
Type No.
RN1314
RN1315
RN1316
RN1317
RN1318
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1314~1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314~1318
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
5
6
7
15
25
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07
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Pages | Pages 8 | ||
Télécharger | [ RN1316 ] |
No | Description détaillée | Fabricant |
RN1310 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
RN1311 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
RN1312 | (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN1313 | (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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