(PDF) AT12020-21 Datasheet - SILICON ABRUPT VARACTOR DIODE

Número de pieza	AT12020-21
Descripción	SILICON ABRUPT VARACTOR DIODE
Fabricantes	Advanced Semiconductor
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No Preview Available ! www.DataSheet4U.com AT12020-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12020-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. FEATURES INCLUDE: • High Tuning Ratio, ∆CT = 10 MIN. • High Quality Factor, Q = 300 MIN. • Hermetic Package, CP = .20 pF LS = .42 nH PACKAGE STYLE 21 MAXIMUM RATINGS IF 200 mA VR PDISS TJ TSTG θJC 120 V 1.75W @ TC 25 OC -55 OC to +150 OC -55 OC to +150 OC 70 OC/W NONE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS VR IR = 10 µA VF IF = 1 mA IR VR = 100 V CT VR = 4 V f = 1.0 MHz ∆CT CT0/ CT120 f = 1.0 MHz Q VR = 4 V f = 50 MHz RS IF = 10 mA f = 2400 MHz MINIMUM TYPICAL 120 36 38 10.0 300 MAXIM 1.0 100 40 0.9 UNITS V V µA pF --- --- Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF AT12020-21 Data sheet ( Hoja de datos )