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PDF FGA180N30D Data sheet ( Hoja de datos )
| Número de pieza | FGA180N30D | |
| Descripción | 300V PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
June 2006
FGA180N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides
low conduction and switching loss. FGA180N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
GCE
TO-3P
Absolute Maximum Rating TC = 25oC unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA180N30D
300
± 30
180
450
10
40
480
192
-55 to +150
300
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
1.56
40
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA180N30D Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs.VGE
Figure 8. Capacitance Characteristics
6
Common Emitter
T = 125oC
C
5
4
3
180A
2
90A
40A
1
I = 20A
C
0
0 4 8 12 16
Gate-Emitter Voltage, V [V]
GE
20
8000
6000
4000
2000
C ie s
Coes
Cres
Common Emitter
V = 0V, f = 1MHz
GE
T = 25oC
C
0
0.1
1 10
Collector-Emitter Voltage, V [V]
CE
30
Figure 9. Gate Charge Characteristics
15
14 Common Emitter
R = 5Ω
L
T = 25oC
12 C
10
8 Vcc = 200V
6
4
2
0
0 50 100 150 200
Gate Charge, Q [nC]
g
250
Figure 10. SOA Characteristics
600
Ic MAX (Pulsed)
100 Ic MAX (Continuous)
10
1
50µs
100µs
1ms
DC Operation
Single Nonrepetitive
0.1 Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1
10 100
Collector - Emitter Voltage, V [V]
CE
1000
Figure 11. Turn-On Characteristics vs.
Gate Resistance
1000
tr
100
10
0
Td(on)
10
Common Emitter
V = 200V, V = 15V
CC GE
I = 40A
C
T = 25oC
C
T = 125oC
C
20 30 40 50
Gate Resistance, R [Ω]
G
Figure 12. Turn Off Characteristics vs.
Gate Resistance
2000
1000
Td(off)
tf
100
10
0
Common Emitter
V = 200V, V = 15V
CC GE
I = 40A
C
T = 25oC
C
T = 125oC
C
10 20
30
Gate Resistance, R [Ω]
G
40
50
FGA180N30D Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA180N30D.PDF ] | |
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