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Numéro de référence | STP11NM60A | ||
Description | N-CHANNEL Power MOSFET | ||
Fabricant | ST Microelectronics | ||
Logo | |||
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STP11NM60A
STP11NM60AFP - STB11NM60A-1
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STP11NM60A
STP11NM60AFP
STB11NM60A-1
600 V
600 V
600 V
<0.45Ω
<0.45Ω
<0.45Ω
11 A
11 A
11 A
n TYPICAL RDS(on) = 0.4Ω
n HIGH dv/dt
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
3
2
1
TO-220
123
I2PAK
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
STP11NM60A
P11NM60A
STP11NM60AFP
P11NM60AFP
STB11NM60A-1
B11NM60A
March 2002
PACKAGE
TO-220
TO-220FP
I2PAK
PACKAGING
TUBE
TUBE
TUBE
1/11
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Pages | Pages 11 | ||
Télécharger | [ STP11NM60A ] |
No | Description détaillée | Fabricant |
STP11NM60 | N-CHANNEL Power MOSFET | ST Microelectronics |
STP11NM60A | N-CHANNEL Power MOSFET | ST Microelectronics |
STP11NM60AFP | N-CHANNEL Power MOSFET | ST Microelectronics |
STP11NM60FD | N-CHANNEL Power MOSFET | ST Microelectronics |
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