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PDF FDD4685 Data sheet ( Hoja de datos )

Número de pieza FDD4685
Descripción P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDD4685
40V P-Channel PowerTrench® MOSFET
40V, 32A, 27m
Features
General Description
October 2006
tm
„ Max rDS(on) = 27mat VGS = –10V, ID = –8.4A
„ Max rDS(on) = 35mat VGS = –4.5V, ID = –7A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering
superior performance in application.
Application
„ Inverter
„ Power Supplies
G
S
D
DT O- P-2A5K2
(T O -25 2)
S
G
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
ID
-Continuous(Silicon Limited)
-Continuous
-Pulsed
EAS Drain-Source Avalanche Energy
PD
Power Dissipation
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
TC= 25°C
TC= 25°C
TA= 25°C
TC= 25°C
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
–40
±20
–32
–40
–8.4
–100
121
69
3
–55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD4685
Device
FDD4685
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
1
www.fairchildsemi.com

1 page




FDD4685 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
1E-3
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
100
101
FDD4685 Rev.B
5 www.fairchildsemi.com

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