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PDF CIL352 Data sheet ( Hoja de datos )
| Número de pieza | CIL352 | |
| Descripción | (CIL351 / CIL352) NPN SILICON PLANAR TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CIL352 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTORS
CIL351/352
TO-18
Metal Can Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
Rth (j-a)
Rth (j-c)
VALUE
70
75
6.0
200
300
1.72
750
4.29
- 65 to +200
583
233
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=100µA, IC=0
Collector Cut Off Current
ICBO
VCB=20V, IE=0
DC Current Gain
hFE IC=1mA, VCE=10V
CIL351
CIL352
Collector Emitter Saturation Voltage
*VCE (sat) IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
Base Emitter on Voltage
VBE (on)
IC=10mA, VCE=5V
MIN
70
75
6.0
100
200
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
SYMBOL
fT
*Pulse Condition: Pulse Width <300µs, Duty Cycle <2%
CIL351_352Rev_1 120504E
TEST CONDITION
IC=10mA, VCE=5V,
f=100MHz
MIN
UNIT
V
V
V
mA
mW
mW/ ºC
mW
mW/ ºC
ºC
ºC/W
ºC/W
TYP
MAX
25
UNIT
V
V
V
nA
250
480
0.25
0.60
1.0
V
V
V
TYP
100
MAX
UNIT
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CIL352.PDF ] | |
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