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DIM200MLS12-A000 fiches techniques PDF

Dynex Semiconductor - Igbt Modules - Chopper

Numéro de référence DIM200MLS12-A000
Description Igbt Modules - Chopper
Fabricant Dynex Semiconductor 
Logo Dynex Semiconductor 





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DIM200MLS12-A000 fiche technique
www.DataSheet4U.com
Replaces November 2002, version DS5553-1.1
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
DIM200MLS12-A000
DIM200MLS12-A000
IGBT Chopper Module
DS5553-2 March 2003
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
11(C2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MLS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The module incorporates a high current rated
freewheel diode. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MLS12-A000
Note: When ordering, please use the whole part number.
Fig. 1 Chopper circuit diagram - lower arm controlled
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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