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PDF DIM200PHM33-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200PHM33-A000 | |
| Descripción | Half Bridge Igbt Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM200PHM33-A000
Replaces November 2002, version DS5464-6.2
FEATURES
I 10µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
DIM200PHM33-A000
Half Bridge IGBT Module
DS5464-7.1 January 2003
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
3.4V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-A000
Note: When ordering, please use the whole part number.
1(E1/C2)
2(C1)
5(E1)
4(G1)
8(C1)
3(E2)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EON
Q
g
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200PHM33-A000
Test Conditions
IC = 200A
V
GE
=
±15V
VCE = 1800V
RG(ON) = RG(OFF) =10Ω
C = 33nF
ge
L ~ 100nH
IF = 200A, VR = 1800V,
dI /dt
F
=
1000A/µs
Min. Typ. Max. Units
- 1350 -
ns
- 200 - ns
- 150 - mJ
- 550 - ns
- 250 - ns
- 300 - mJ
- 2.5 - µC
- 80 - µC
- 140 -
A
- 110 - mJ
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =10Ω
C = 33nF
ge
L ~ 100nH
IF = 200A, VR = 1800V,
dIF/dt = 850A/µs
Min. Typ. Max. Units
- 1400 -
ns
- 250 - ns
- 210 - mJ
- 550 - ns
- 250 - ns
- 440 - mJ
- 150 - µC
- 150 -
A
- 200 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM200PHM33-A000.PDF ] | |
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