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NGD15N41CLT4 fiches techniques PDF

ON Semiconductor - Ignition IGBT

Numéro de référence NGD15N41CLT4
Description Ignition IGBT
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NGD15N41CLT4 fiche technique
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 , C = 100 pF
VCES
VCER
VGE
IC
ESD
440 VDC
440 VDC
15 VDC
15 ADC
50 AAC
kV
8.0
ESD (Machine Model) R = 0 , C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 107 Watts
0.71 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
http://onsemi.com
15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
4
12
3
E
DPAK
CASE 369C
STYLE 2
12
3
4 D2PAK
CASE 418B
STYLE 4
4
TO−220AB
CASE 221A
STYLE 9
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 5
1
Publication Order Number:
NGD15N41CL/D

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