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BLC6G20LS-75 fiches techniques PDF

NXP Semiconductors - UHF power LDMOS transistor

Numéro de référence BLC6G20LS-75
Description UHF power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLC6G20LS-75 fiche technique
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BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp
ηD ACPR400 ACPR600 EVMrms
(MHz)
(V) (W) (dB) (%) (dBc) (dBc) (%)
CW 1930 to 1990 28 63 19 52 - - -
GSM EDGE
1930 to 1990 28 29.5 19 38.5 62.5 72
1.5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an IDq of 550 mA:
x Output power = 29.5 W (AV)
x Gain = 19 dB
x Efficiency = 38.5 %
x ACPR400 = 62.5 dBc
x ACPR600 = 72 dBc
x EVMrms = 1.5 %
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use

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